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| Unmounted Laser Bars 20 W cw ... 100 W qcw SPL Bxxx Features * Unmounted monolithic linear array * High efficiency MOVPE-grown quantum well structure * Highly reliable strained layer InGa(Al)As/GaAs material * Standard wavelength selection is 3 nm, others on request * Solderable p- and n-side metalization Applications * Pumping of solid state lasers (Nd: YAG, Yb: YAG, ...) * Direct industrial applications (soldering, surface treatment, marking, ...) * Heating, illumination * Medical and printing application Type SPL BG81 SPL BG94 SPL BG98 SPL BS79 SPL BS81 SPL BS94 Power 25 W .. 30 W cw Wavelength1) 808 nm 940 nm 980 nm 794 nm 808 nm 940 nm Ordering Code Q62702-P1654 Q62702-P1733 Q62702-P3259 Q62702-P3257 Q62702-P1719 Q62702-P3258 50 W .. 100 W qcw 1) Other wavelengths in the range of 780 ... 980 nm are available on request. Semiconductor Group 1/2 1997-11-24 SPL Bxxx Characterictics (TA = 25 C) Parameter Symbol Wavelength Typical Values Unit BGxx Recommended output power 1) Catastrophic optical damage limit 1), 2) Threshold current 2) BSxx 50 ... 100 qcw > 110 > 200 < 17 > 0.85 > 35 45 x 12 38 x 12 804 935 <4 W W A W/A % Deg. nm nm % m m m mm m m Popt PCOD Ith 1) - 20 ... 30 cw 808nm > 80 940nm > 130 - - - 808nm 940nm 808nm 802 940nm 934 - - - - - - - 50 200 (20 x 3) 400 10.0 25 < 11 Differential quantum efficiency 2) Total conversion efficiency Beam divergence (FWHM) Standard pulse wavelength 2), 3) Spectral width (FWHM) Fill factor Emitter width (Structure) Pitch Bar width (Emitters per bar) Cavity length Bar thickness tot x || pulse F w p W L H 80 100 - 126 10.0 77 600 115 10 1) Depending on mounting technique, i.e. on the resulting thermal resistance. 2) Calculated from measurements on one emitter of an unmounted bar (1 s pulses at 1 kHz repetition rate). 3) Differing pulse wavelengths are available on request. Semiconductor Group 2/2 1997-11-24 |
Price & Availability of SPLBXXX
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